描述
fd150r12rt4
IGBT 晶体管 IGBT 1200V 150A
否
Fairchild Semiconductor
集电极—发射极最大电压
650 V
2.3 V
20 V 在25
150 A
400 nA
187 W
TO-247
Tube
FD150R12RT4
Infineon Technologies AG
INFINEON
9
487 kb
34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode